Phosphorus and boron codoping of silicon nanocrystals by ion implantation: Photoluminescence properties
Phosphorus and boron codoping of silicon nanocrystals by ion implantation: Photoluminescence properties
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DOI：
10.1103/physrevb.85.045441
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发表时间：
2012-01
影响因子：
3.7
通讯作者：
Toshihiro Nakamura;S. Adachi;M. Fujii;K. Miura;S. Yamamoto
中科院分区：
文献类型：
--
作者：
Toshihiro Nakamura;S. Adachi;M. Fujii;K. Miura;S. Yamamoto
研究了P、B单掺和P、B共掺硅纳米晶的光致发光特性。在单掺杂的Si-nc样品中，由于光激发激子和掺杂杂质提供的自由载流子之间的俄歇非辐射复合过程，发生PL猝灭。另一方面，在（P，B）共掺杂样品中，在900 nm处的本征Si-nc发射峰的长波长侧清楚地观察到施主-受主（D-A）对复合发射。发现D-A对复合能小于体硅的带隙能，并且强烈地依赖于在Si-nc中掺杂的P和B杂质的数量。在50和300 K下测量了PL谱，发现（P，B）共掺杂样品在300 K下发生了强烈的热猝灭。这种猝灭效应可能是由于载流子在给体态和受体态之间的迁移造成的。的PL衰减率被确定为纯和（P，B）共掺杂的Si-nc样品的发射光波长的函数。
The photoluminescence (PL) properties of P or B single-doped Si nanocrystals (Si-nc's) and P and B co-doped Si-nc's are studied. In the single-doped Si-nc samples, PL quenching occurs as a result of the Auger nonradiative recombination process between the photoexcited excitons and free carriers supplied by doped impurities. In the (P, B) co-doped sample, on the other hand, the donor-acceptor (D-A)-pair recombination emission is clearly observed on the long-wavelength side of the intrinsic Si-nc emission peak at900 nm. The D-A-pair recombination energy is found to be smaller than the band-gap energy of bulk Si and is strongly dependent on the number of P and B impurities doped in a Si-nc. PL spectra are measured at 50 and 300 K and found to indicate that strong thermal quenching occurs in a (P, B) co-doped sample at 300 K. This quenching effect is probably because of carrier migration among the donor and acceptor states. The PL decay rate is determined as a function of the emitted-light wavelength for the pure and (P, B) co-doped Si-nc samples.