Electronic states of a hydrogenic donor impurity in semiconductor nano-structures
Electronic states of a hydrogenic donor impurity in semiconductor nano-structures
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DOI：
10.1016/j.physleta.2007.02.028
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发表时间：
2007-06-18
影响因子：
2.6
通讯作者：
Xia, Han-Bai
中科院分区：
文献类型：
--
作者：
Li, Shu-Shen;Xia, Han-Bai
在有效质量泛函理论框架下，提出了一种统一计算低维半导体纳米结构中类氢施主杂质电子态的方法，并研究了该系统的电子结构.与以往的方法相比，本方法具有以下优点：（a）可广泛应用于各种形状纳米结构中类氢施主杂质电子态的计算;（B）易于推广到外场效应和其它复杂情况的研究;（c）激发态的计算比变分法容易;（d）可以方便地计算电子态随纳米结构中类氢施主杂质位置的变化;（e）可以明确地计算结合能。(c)2007 Elsevier B. V.保留所有权利。
We propose a method for uniformly calculating the electronic states of a hydrogenic donor impurity in low-dimensional semiconductor nano-structures in the framework of effective-mass envelope-function theory, and we study the electronic structures of this systems. Compared to previous methods, our method has the following merits: (a) It can be widely applied in the calculation of the electronic states of hydrogenic donor impurities in nano-structures of various shapes; (b) It can easily be extended to study the effects of external fields and other complex cases; (c) The excited states are more easily calculated than with the variational method; (d) It is convenient to calculate the change of the electronic states with the position of a hydrogenic donor impurity in nano-structures; (e) The binding energy can be calculated explicitly. (c) 2007 Elsevier B.V. All rights reserved.