A 240 GHz single-chip radar transceiver in a SiGe bipolar technology with on-chip antennas and ultra-wide tuning range
A 240 GHz single-chip radar transceiver in a SiGe bipolar technology with on-chip antennas and ultra-wide tuning range
复制标题
采用 SiGe 双极技术的 240 GHz 单芯片雷达收发器,具有片上天线和超宽调谐范围
DOI:
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发表时间:
2013
期刊:
影响因子:
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通讯作者:
A. Bilgic
中科院分区:
文献类型:
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作者:
C. Bredendiek;N. Pohl;T. Jaeschke;K. Aufinger;A. Bilgic
This paper presents an ultra-wideband single-chip radar transceiver MMIC around 240 GHz in a SiGe:C bipolar laboratory technology with an fT of 240 GHz and fmax of 380 GHz. The presented transceiver architecture consists of a fundamental 120 GHz VCO, two 240 GHz frequency doublers, a fundamental 240 GHz down-conversion mixer, a divide-by-four stage, a PLL-mixer and two on-chip patch antennas. The complete transceiver architecture is fully differential. The chip facilitates a -1 dBm peak output power (EIRP) at the transmit patch antenna and a tuning range of 61 GHz. The phase noise at 1 MHz offset is -84 dBc/Hz at 240 GHz (and better than -76 dBc/Hz over the full tuning range). The 240 GHz mixer offers a simulated noise figure below 17 dB, a simulated conversion gain of better than 5 dB, and an input refered compression point of -1.3 dBm. The results are achieved with a power consumption of 750 mW from a single 5 V supply.