Intense terahertz radiation from longitudinal optical phonons in GaAs∕AlAs multiple quantum wells
Intense terahertz radiation from longitudinal optical phonons in GaAs∕AlAs multiple quantum wells
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DOI：
10.1063/1.2033138
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发表时间：
2005-08
影响因子：
4
通讯作者：
K. Mizoguchi;T. Furuichi;O. Kojima;M. Nakayama;S. Saito;A. Syouji;K. Sakai
中科院分区：
文献类型：
--
作者：
K. Mizoguchi;T. Furuichi;O. Kojima;M. Nakayama;S. Saito;A. Syouji;K. Sakai
我们报道了利用超短激光脉冲从GaAs / AlAs多量子阱（mqw）中产生强太赫兹（THz）电磁波。相干类砷化镓纵向光学（LO）声子在超过6 ps的时间范围内产生了频率为8.8 THz的明显太赫兹波，这表明其消相时间较长。在GaAs∕AlAs MQW中，相干类GaAs声子产生的太赫兹波功率比外延生长GaAs薄膜中相干类GaAs声子产生的太赫兹波功率提高了约100倍。我们讨论了MQW中相干类砷化镓声子增强太赫兹波的来源。
We report the generation of intense terahertz (THz) electromagnetic waves from GaAs∕AlAs multiple quantum wells (MQWs) using ultrashort laser pulses. Pronounced THz waves from the coherent GaAs-like longitudinal optical (LO) phonons with a frequency of 8.8 THz were observed in the time region over 6 ps, which indicates the long dephasing time. The power of the THz waves from the coherent GaAs-like LO phonons in the GaAs∕AlAs MQW was enhanced to be about 100 times larger than that of those from coherent LO phonons in an epitaxial-growth GaAs film. We discuss the origin of the enhancement of the THz wave from coherent GaAs-like LO phonon in the MQW.