Electric and magnetic properties of magnetic (CoFeTaB)(100−x)Ox films
Electric and magnetic properties of magnetic (CoFeTaB)(100−x)Ox films
复制标题
DOI：
10.1063/1.4998996
复制
发表时间：
2017-10
影响因子：
3.2
通讯作者：
Wen Sun;A. S. Saleemi;Zhaochu Luo;Zhengang Guo;C. Xiong;Ziyao Lu;Xiaozhong Zhang
中科院分区：
文献类型：
--
作者：
Wen Sun;A. S. Saleemi;Zhaochu Luo;Zhengang Guo;C. Xiong;Ziyao Lu;Xiaozhong Zhang
通过控制氧气流量，改变了(CoFeTaB)(100−x)Ox系统中的氧含量，这是一种新报道的可能的磁性半导体。(CoFeTaB)(100−x)Ox薄膜的电磁性能依赖于(CoFeTaB)(100−x)Ox薄膜的氧含量。生长的(CoFeTaB)(10 0−x)Ox薄膜的电阻率可从3.77×10−4Ω·cm变化到绝缘层。相应地，生长的(CoFeTaB)(100−x)Ox薄膜的磁性从铁磁性到顺磁性变化。电阻率的提高主要是由于金属Co的氧化作用增强，而磁性转换是由于薄膜中铁磁性Fe3+的减少和顺磁性Co2+的增加所致。这些发现为定制(CoFeTaB)(100−x)Ox材料的电磁性能提供了基本的参考。通过控制氧气流量，改变了(CoFeTaB)(100−x)Ox系统中的氧含量，这是一种新报道的可能的磁性半导体。(CoFeTaB)(100−x)Ox薄膜的电磁性能依赖于(CoFeTaB)(100−x)Ox薄膜的氧含量。生长的(CoFeTaB)(10 0−x)Ox薄膜的电阻率可从3.77×10−4Ω·cm变化到绝缘层。相应地，生长的(CoFeTaB)(100−x)Ox薄膜的磁性从铁磁性到顺磁性变化。电阻率的提高主要是由于金属Co的氧化作用增强，而磁性转换是由于薄膜中铁磁性Fe3+的减少和顺磁性Co2+的增加所致。这些发现为(CoFeTaB)(100−x)Ox材料在自旋电子学中的潜在应用提供了基本的参考。
By the controlling of oxygen flow rate, the oxygen content has been altered in the (CoFeTaB)(100−x)Ox system, a newly reported possible magnetic semiconductor. The electric and magnetic properties of (CoFeTaB)(100−x)Ox films are dependent on the oxygen content of (CoFeTaB)(100−x)Ox films. The resistivity of the grown (CoFeTaB)(100−x)Ox films could be altered from 3.77 × 10 − 4 Ω · cm to insulator. Correspondingly, the magnetic behavior of the grown (CoFeTaB)(100−x)Ox films was varied from ferromagnetism to paramagnetism. The increase in the resistivity was mainly attributed to the enhanced oxidization of metal Co; and the magnetism conversion was resulted from the decrease of ferromagnetic Fe3+ and increase of paramagnetic Co2+ in the grown films. These findings provide the fundamental reference for tailoring the electric and magnetic properties of (CoFeTaB)(100−x)Ox materials for potential applications in spintronics.By the controlling of oxygen flow rate, the oxygen content has been altered in the (CoFeTaB)(100−x)Ox system, a newly reported possible magnetic semiconductor. The electric and magnetic properties of (CoFeTaB)(100−x)Ox films are dependent on the oxygen content of (CoFeTaB)(100−x)Ox films. The resistivity of the grown (CoFeTaB)(100−x)Ox films could be altered from 3.77 × 10 − 4 Ω · cm to insulator. Correspondingly, the magnetic behavior of the grown (CoFeTaB)(100−x)Ox films was varied from ferromagnetism to paramagnetism. The increase in the resistivity was mainly attributed to the enhanced oxidization of metal Co; and the magnetism conversion was resulted from the decrease of ferromagnetic Fe3+ and increase of paramagnetic Co2+ in the grown films. These findings provide the fundamental reference for tailoring the electric and magnetic properties of (CoFeTaB)(100−x)Ox materials for potential applications in spintronics.