Transient dose rate effects in silicon–germanium heterojunction bipolar transistors
Transient dose rate effects in silicon–germanium heterojunction bipolar transistors
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DOI：
10.1063/5.0175710
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发表时间：
2023-12
期刊：
影响因子：
1.6
通讯作者：
Pei Li;Zhiyong Dong;Hongxia Guo;Yingqi Ma;C. He;Yaxin Guo;Yonghong Li
中科院分区：
文献类型：
--
作者：
Pei Li;Zhiyong Dong;Hongxia Guo;Yingqi Ma;C. He;Yaxin Guo;Yonghong Li
Transient γ-radiation and laser-simulated experiments were carried out to investigate the transient dose rate effect (TDRE) in SiGe heterojunction bipolar transistors (HBTs) for the first time. The results indicate that IBM43RF0100 SiGe HBTs experience a significant sensitivity of TDRE. For the laser-simulated experiment, the duration of transient current and charge collection are matched well with that of transient γ-radiation. The amplitude of transient photocurrent induced by the lower energy order of μJ approaches the transient photocurrent induced by transient γ-radiation. It is demonstrated that laser-simulated experiments are a candidate and a convenient method to evaluate the TDRE response of SiGe HBTs, which avoids serious electromagnetic interference in the transient γ-radiation environment.
