Transport properties of Al/Ni and Al/Ag multilayer systems
Transport properties of Al/Ni and Al/Ag multilayer systems
复制标题
DOI：
10.1088/0953-8984/3/46/008
复制
发表时间：
1991-11
期刊：
影响因子：
--
通讯作者：
H. Sato;I. Sakamoto;C. Fierz
中科院分区：
文献类型：
--
作者：
H. Sato;I. Sakamoto;C. Fierz
在1.6~300K温度范围内，测量了Al/Ni和Al/Ag溅射多层膜的电阻率、霍尔效应、磁阻和温差电势。具有小层周期的Al/Ni样品的电阻率随温度的变化呈现负温度系数，在100K以上为饱和。这两个系统的霍尔系数都敏感地依赖于它们的层周期。在霍尔效应和磁阻效应中，可以明显观察到小波长Al/Ni样品的铁磁矩减小。基于退火对输运性质的影响，讨论了在这些材料中形成某些金属间化合物的可能性。多层膜系统中霍尔效应和磁阻的测量给出了有关其磁性的各种信息。
The electrical resistivity, Hall effect, magnetoresistance and thermoelectric power of Al/Ni and Al/Ag sputtered multilayer films have been measured between 1.6 K and 300 K. The temperature dependence of the electrical resistivity of Al/Ni samples with small layer periodicity shows a negative temperature coefficient at low temperatures and saturation above about 100 K. The Hall coefficient of both systems depends sensitively on their layer periodicity. A reduction of ferromagnetic moment in small wavelength Al/Ni samples was clearly observed in the Hall effect and the magnetoresistance. The possibility of some formation of intermetallic compounds in these materials is discussed based on the effect of annealing on the transport properties. The measurement of the Hall effect and the magnetoresistance in multilayer systems gives various information about their magnetic properties.