High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition
High quality amorphous–crystalline silicon heterostructure prepared by grid-biased remote radio-frequency plasma enhanced chemical vapor deposition
复制标题
偏栅远程射频等离子体增强化学气相沉积制备高质量非晶硅异质结构
DOI：
10.1016/j.jnoncrysol.2012.08.015
复制
发表时间：
2012
影响因子：
3.5
通讯作者：
N. Kherani
中科院分区：
文献类型：
--
作者：
P. Mahtani;K. Leong;Bastien Jovet;D. Yeghikyan;N. Kherani
采用栅极偏置远程射频等离子体增强化学气相沉积(RFPECVD)方法在浮区1-2Ωcm单晶硅(c-Si)衬底上沉积a-Si：H薄膜，获得了很高的有效少数载流子寿命(6.3ms)和很低的表面复合速度(2.6 cm/S)。该方法在传统的RF PECVD结构中采用了半透明的直流偏置栅极。直流偏置栅极位于射频电极之间，以便形成远程等离子体，从而允许控制氢化非晶硅(a-Si：H)薄膜生长中所涉及的前驱体的通量和类型。结果表明，与传统的射频二极管相比，栅极偏置的远程射频PECVD方法制备的a-Si：H薄膜具有更好的钝化性能，并且空穴和SiH键浓度显著降低，总氢含量更低，所有这些都有助于获得更高质量的a-Si：H-c-Si异质结构。
Very high effective minority carrier lifetime (6.3ms) and very low surface recombination velocity (2.6cm/s) have been demonstrated on float-zone 1–2Ωcm crystalline silicon (c-Si) wafers by depositing a-Si:H films using grid-biased remote radio-frequency plasma enhanced chemical vapor deposition (RF PECVD). This method employs a semi-transparent DC biased-grid within the conventional RF PECVD configuration. The DC-biased grid is positioned between the RF electrodes in order to develop a remote plasma and thus allow control of the flux and type of precursors involved in the growth of hydrogenated amorphous silicon (a-Si:H) film. It is shown that compared to conventional RF diode, the grid-biased remote RF PECVD method produces a-Si:H films with superior passivating properties as well as significantly lower concentrations of void and SiH2bonding and a lower overall hydrogen content, all of which contribute to a higher quality a-Si:H–c-Si heterostructure.