Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon ( 100 )
Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon ( 100 )
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最大化立方相氮化镓在纳米图案硅上的表面覆盖 (100)
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
C. Bayrama
中科院分区：
文献类型：
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作者：
R. Liu;C. Bayrama
在这里，我们研究了通过硅（100）纳米图案化实现的金属有机化学气相沉积生长的氮化镓中的六边形到立方相转变。电子背散射衍射和深度分辨阴极发光实验表明，当GaN沉积厚度（hc），蚀刻深度（td）和开口宽度（p）遵守hc 1：06 p 0：75 td时，完全立方相GaN表面覆盖;符合基于晶体学的几何模型。通过电子背散射衍射和阴极发光测量研究了立方GaN的均匀性。原子力显微镜显示出光滑的立方GaN表面。相变立方GaN显示出集成光子器件的光学和结构质量的前景。出版社：AIP Publishing [http：//dx.doi.org/10.1063/1.4960005]
Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapordeposition-grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness (hc), etch depth (td), and opening width (p) obey hc 1:06p 0:75td; in line with a geometrical model based on crystallography. Cubic GaN uniformity is studied via electron backscatter diffraction and cathodoluminescence measurements. Atomic force microscopy reveals a smooth cubic GaN surface. Phase-transition cubic GaN shows promising optical and structural quality for integrated photonic devices. Published by AIP Publishing. [http://dx.doi.org/10.1063/1.4960005]