Vacancies and the Chemical Trapping of Hydrogen in Silicon
Vacancies and the Chemical Trapping of Hydrogen in Silicon
复制标题
硅中的空位和氢的化学捕获
DOI：
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发表时间：
1979
期刊：
影响因子：
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通讯作者：
H. Stein
中科院分区：
文献类型：
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作者：
H. Stein
对80K注入的H(D)的红外测量首次证明了晶态Si(a-Si)中存在类Si1}中心，而非晶态Si(a-Si)中的Si1}中心稳定在700K以下，晶带在300K以下退火，具有激活能和发光增强的特点，这是Si空位的特征。这些结果与之前在a$-Si中发现的H的缺陷相关联。
The first evidence for Si${\mathrm{H}}_{1}$-like centers in crystalline Si ($c$-Si) is presented from infrared measurements of H (D) implanted at 80 K. In contrast to Si${\mathrm{H}}_{1}$ centers in amorphous Si ($a$-Si) which are stable to \ensuremath{\approx} 700 K, the crystalline band anneals below 300 K with an activation energy and illumination enhancement that are characteristic of the Si vacancy. These results relate specific defects for implanted H in $c$-Si to previous observations for H in $a$-Si.