Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
Evolution, Revolution, and Technology Scaling—The Impact on ESD and EOS Reliability
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演进、革命和技术扩展——对 ESD 和 EOS 可靠性的影响
DOI：
10.3389/fmats.2018.00033
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发表时间：
2018
影响因子：
3.2
通讯作者：
S. Voldman
中科院分区：
文献类型：
--
作者：
S. Voldman
在半导体器件的缩放中，在器件尺寸、结构变化和尺寸方面进行了进化和革命性的修改。MOSFET尺寸缩放对静电放电（ESD）和电过应力（EOS）可靠性和鲁棒性的影响具有积极和消极的影响。在本出版物中，将详细讨论技术的演变和革命性变化如何影响ESD和EOS结果。本文将讨论在衬底，威尔斯，隔离，源/漏区，栅极布线，层间布线和互连的变化。
In the scaling of semiconductor devices, evolutionary and revolutionary modifications are made in the device dimension, structural changes and dimensions. The effect of MOSFET scaling on electrostatic discharge (ESD) and electrical overstress (EOS) reliability and robustness have both positive and negative implications. In this publication, the evolutionary and revolutionary technology changes on how they influence the ESD and EOS results will be discussed in full detail. The paper will discuss changes in the substrate, wells, isolation, source/drain regions, gate dielectrics, inter-level dielectrics and interconnects.