Full-Thickness Characterization of Plasma Polymerized Hexane Films Irradiated by an Electron Beam

Full-Thickness Characterization of Plasma Polymerized Hexane Films Irradiated by an Electron Beam
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电子束辐照等离子体聚合己烷薄膜的全厚度表征

DOI:
10.1002/ppap.201100067
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发表时间:
2011
影响因子:
3.5
通讯作者:
Pedersen R
Pedersen R
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Pedersen R

文献摘要

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薄的等离子体聚合己烷(ppHex)薄膜已被证明是有用的作为一种新型的电子束光刻胶。我们目前的飞行时间二次离子质谱分析的1050 nm厚的ppHex薄膜沉积在两个不同的RF功率(10和50 W),然后暴露于电子束在不同的剂量。作为沉积,高功率和低功率膜表现出化学组成的差异,解释了实验观察到的溶解度差异。将ppHex薄膜暴露于高剂量(>5 mC cm−2)的电子束中会增加ppHex薄膜中的交联量,使其不溶于显影剂,并允许该材料用作电子束光刻的新型抗蚀剂。
Thin plasma polymerized hexane (ppHex) films have been shown to be useful as a novel resist for electron beam lithography. We present time‐of‐flight secondary ion mass spectroscopy analysis of ∼50 nm thick ppHex films deposited at two different RF powers (10 and 50 W) followed by exposure to an electron beam at various doses. As‐deposited, high‐power and low‐power films exhibit differences in chemical composition, explaining an experimentally observed difference in solubility. Exposure of the ppHex films to an electron beam at high doses (>5 mC cm−2) increases the amount of cross‐linking in the ppHex film, rendering them insoluble in a developer, and allowing for the material to be used as a novel resist for electron beam lithography.