Deposition and Characterization of Copper Chalcopyrite Based Solar Cells using Electrochemical Techniques
Deposition and Characterization of Copper Chalcopyrite Based Solar Cells using Electrochemical Techniques
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使用电化学技术沉积和表征铜黄铜矿基太阳能电池
DOI：
10.1149/1.2731222
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
Dale P
中科院分区：
文献类型：
--
作者：
Dale P
从单一的pH缓冲液中在钼衬底上电沉积了Cu(In，Ga)Se2薄膜，并在还原硒气氛中进行了热处理。利用恒电位控制的三电极装置和电解液接触对薄膜的光电性能进行了表征。利用脉冲照明来确定载体的类型和光响应速度。采用斩波单色照明测量光电流谱。将电沉积的铜黄铜矿薄膜与溅射和喷涂技术制备的薄膜进行了比较。所有电沉积薄膜都具有p型光响应，其中溅射薄膜的光电流最大。不同材料的最佳氰化物刻蚀时间不同，最大光电流响应也不同。电沉积CuInSe_2的带隙为0.95 eV，略低于溅射膜的带隙。电沉积的Cu(In，Ga)Se_2材料具有较小的光响应，但其禁带宽度与CuInSe_2相似。基于电沉积吸收层的最佳器件的效率为4.5%。
Cu (In, Ga) Se2 films were electrodeposited on molybdenum substrates from a single pH buffered bath and annealed in a reducing selenium atmosphere. The opto-electronic properties of the films were characterized using a potentiostatically-controlled three electrode setup and an electrolyte contact. Pulsed illumination was used to determine the carrier type and the speed of photoresponse. Chopped monochromatic illumination was used to measure photocurrent spectra. The electrodeposited copper chalcopyrite films were compared with films prepared by sputtering and spraying techniques. All electrodeposited films gave p-type photoresponses, and the sputtered film had the highest photocurrent. Optimum cyanide etch times to illicit the maximum photocurrent response were different for each material. The band gap of electrodeposited CuInSe2 was 0.95 eV, which was slightly lower than that of the sputtered film. The electrodeposited Cu (In, Ga) Se2 material gave a smaller photo-response but its band gap appeared to be similar to that of CuInSe2. The best device based on an electrodeposited absorber layer had an efficiency of 4.5%.