240 GHz and 272 GHz Fundamental VCOs Using 32 nm CMOS Technology
240 GHz and 272 GHz Fundamental VCOs Using 32 nm CMOS Technology
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使用 32 nm CMOS 技术的 240 GHz 和 272 GHz 基本 VCO
DOI：
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发表时间：
2013
影响因子：
4.3
通讯作者：
E. Socher
中科院分区：
文献类型：
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作者：
Naftali Landsberg;E. Socher
采用IBM CMOS32 nm工艺实现了240 GHz和272 GHz两种基波振荡器。这两个振荡器的设计都基于科尔皮茨差分拓扑，其中器件的寄生电容被用作电感-电容电池组的一部分。讨论了设计过程和考虑因素，以及测量步骤。给出了预测压控振荡器输出功率及其相位噪声的简化模型，并与实测值进行了比较。240 GHz振荡器的输出功率为0.2 mW(-7dBm)，总功耗为13.3 mW，通过改变栅极和漏极偏压，获得了13.5 GHz的总调谐范围。272 GHz振荡器实现了约-22dBm的较低功率水平，总功耗仅为7 mW。
Two fundamental oscillators, a 240 GHz and a 272 GHz are demonstrated using the IBM CMOS 32 nm process. The design of both oscillators was based on a Colpitts differential topology, where parasitic capacitances of the device are used as a part of the inductor-capacitor tank. The design process and consideration is discussed, as well as the measurement procedures. A simplified model predicting the output power of the voltage-controlled oscillator (VCO) and its phase noise is presented, and comparison to the measured results is discussed. An output power level of 0.2 mW ( -7 dBm) was realized for the 240 GHz oscillator, with total power consumption of 13.3 mW and a total tuning range of 13.5 GHz achieved by changing both the gate and drain bias. The 272 GHz oscillator achieved a lower power level of about -22 dBm, with a total power consumption of only 7 mW.