Designs for thin-film-coated semiconductor thermal neutron detectors
Designs for thin-film-coated semiconductor thermal neutron detectors
复制标题
薄膜涂层半导体热中子探测器的设计
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
J. Sanders
中科院分区：
文献类型：
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作者：
D. Mcgregor;R. Klann;H. K. Gersch;J. Sanders
薄膜涂层半导体探测器已经被研究和用作中子探测器几十年了。不幸的是，对于正面辐照的器件，基本设计将热中子探测效率限制为对于/sup 10/B涂覆的器件仅为3.95%，并且对于/sup 6/LiF涂覆的器件仅为4.3%。本文提出了几种提高薄膜涂层半导体热中子探测器热中子探测效率的简单方法。
Thin film coated semiconductor detectors have been studied and used as neutron detectors for decades. Unfortunately, with front-irradiated devices, the basic design limits the thermal neutron detection efficiency to only 3.95% for /sup 10/B-coated devices and only 4.3% for /sup 6/LiF-coated devices. Presented in the following work are several straightforward methods to increase the thermal neutron detection efficiency for thin-film-coated semiconductor thermal neutron detectors.