THz Autocorrelators for ps Pulse Characterization Based on Schottky Diodes and Rectifying Field-Effect Transistors
THz Autocorrelators for ps Pulse Characterization Based on Schottky Diodes and Rectifying Field-Effect Transistors
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DOI：
10.1109/tthz.2015.2482943
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发表时间：
2015-11-01
影响因子：
3.2
通讯作者：
Penirschke, Andreas
中科院分区：
文献类型：
--
作者：
Preu, Sascha;Mittendorff, Martin;Penirschke, Andreas
当肖特基二极管和整流场效应晶体管在饱和状态下工作时，它们对入射太赫兹功率表现出次线性响应，它们可以用作快速自激振荡器，产生脉冲包络信息。我们报告的自相关测量在3.41太赫兹的高功率太赫兹脉冲的脉冲宽度和脉冲结构的确定。通过条纹分辨测量，还获得了脉冲的太赫兹频率。我们开发了一个理论模型的整流过程和比较的天线耦合肖特基二极管的大面积场效应晶体管整流器的性能。虽然肖特基二极管饱和较早，因此可以用于在较低的输入功率的自相关测量，无天线的大面积场效应晶体管可以用于最高的功率电平，甚至在自由电子激光器，结果是非常强大的。
When operating Schottky diodes and rectifying field-effect transistors in the saturation regime, where they show a sublinear response to incident THz power, they can be used as fast autorcorrelators yielding information on the pulse envelope. We report on autocorrelation measurements at 3.41 THz of high-power THz pulses for determination of the pulse duration and pulse structure. By fringe-resolved measurements, the THz frequency of the pulse is also obtained. We develop a theoretical model for the rectification process and compare the performance of an antenna-coupled Schottky diode to a large-area field-effect transistor rectifier. While the Schottky diode saturates earlier and can therefore be used for autocorrelation measurements at lower input power, antenna-less large-area field-effect transistors can be used for highest power levels-even at free electron lasers-and turn out to be very robust.