Highly Transparent Conducting Indium Tin Oxide Thin Films Prepared by Radio Frequency Magnetron Sputtering and Thermal Annealing
Highly Transparent Conducting Indium Tin Oxide Thin Films Prepared by Radio Frequency Magnetron Sputtering and Thermal Annealing
复制标题
DOI：
10.1166/jnn.2019.16242
复制
发表时间：
2019-03-01
影响因子：
--
通讯作者：
Kim, Hyunsoo
中科院分区：
文献类型：
--
作者：
Parida, Bhaskar;Gil, Youngun;Kim, Hyunsoo
采用射频磁控溅射和后热退火法制备了高质量的ITO薄膜。热退火温度和气氛对ITO薄膜的光学和电学性能都有显著影响。制备的110 nm厚的ITO薄膜在550 nm波长下的光学透过率为34.2%，电阻率为9.2×10~(-4)欧米伽厘米。值得注意的是，在氮气气氛中850℃热处理1min的ITO薄膜具有显著的光学透过率(97.3%)和1.3×10(-4)欧米伽厘米的低电阻率，而在空气或氧气环境中热处理的ITO薄膜尽管由于氧的存在而具有良好的光学透过率，但其电学性能较差。氮气退火后ITO薄膜的高质量可以归因于有效地抑制了薄膜中的氧掺入(从而保持了ITO薄膜中的氧空位)、加强了锡的掺杂以及提高了结晶度的综合作用。
High-quality ITO (indium tin oxide) films were grown by radio frequency (RF) magnetron sputtering and post thermal annealing. Both the thermal annealing temperature and the atmosphere significantly influenced the optical and electrical properties of ITO films. The as-grown 110-nm-thick ITO film showed an optical transmittance of 34.2% at a wavelength of 550 nm and electrical resistivity of 9.2x10(-4) Omega cm. Notably, the ITO films annealed at 850 degrees C for 1 min in nitrogen ambient led to a significantly improved optical transmittance (97.3%) and the low electrical resistivity of 1.3x10(-4) Omega cm, while those annealed in air or oxygen ambient produced poorer electrical properties despite their good optical transmittance owing to the presence of oxygen. The high quality of the ITO film annealed in nitrogen could be attributed to the combined effects of effective suppression of oxygen incorporation into films (thus maintaining oxygen vacancies in the ITO film), enhanced Sn doping, and improved the crystallinity with larger grain size.