High carrier mobility in chemically modified graphene on an atomically flat high-resistive substrate
High carrier mobility in chemically modified graphene on an atomically flat high-resistive substrate
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DOI：
10.1088/0022-3727/46/28/285303
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发表时间：
2013-07
期刊：
影响因子：
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通讯作者：
I. A. Kotin;I. Antonova;A. I. Komonov;V. Seleznev;R. Soots;V. Prinz
中科院分区：
文献类型：
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作者：
I. A. Kotin;I. Antonova;A. I. Komonov;V. Seleznev;R. Soots;V. Prinz
为了提供石墨烯中载流子的高导电性和迁移率，提出了用于石墨烯薄片的特殊高阻衬底。衬底是由N-甲基吡咯烷酮插层少层石墨烯(FLG)在100-180°C温度范围内对插层石墨烯样品进行热处理而生成的，通过恢复顶层电导率可以在原子平坦的高阻衬底上生成包含高导电性单层石墨烯的结构。由于高的载流子迁移率(高达16000-42000cm2V−1 S−1)和极强的栅压感应调制(4-5个数量级)，所得到的结构具有潜在的电子应用前景。强烈的栅极电压对电流的调制清楚地表明，最上层是化学修饰的石墨烯。在所描述的结构中控制表面导电性的可能性为二维纳米设计提供了独特的工具。
Special high-resistive substrates for graphene sheets are suggested with the aim of providing high conductivity and mobility of charge carriers in graphene. The substrates were created from N-methylpyrrolidone-intercalated few-layer graphene (FLG) using anneals given to FLG samples in the temperature range 100–180 °C. Structures containing a highly conductive single-layer graphene on an atomically flat, high-resistive substrate were produced by recovering the top-layer conductivity. The obtained structures have potential in electronic applications due to a high carrier mobility (up to 16 000–42 000 cm2 V−1 s−1) and strong gate-voltage-induced modulation (by 4–5 orders of magnitude) of the current in the top graphene layer. The strong gate-voltage-induced modulation of the current clearly demonstrated that the top layer was chemically modified graphene. The possibility of governing the surface conductivity in the described structures offers a unique tool for two-dimensional nanodesign.