Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors
Development of Solution Buffer Layers for RABiTS Based YBCO Coated Conductors
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DOI：
10.1109/tasc.2010.2092731
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发表时间：
2011
影响因子：
1.8
通讯作者：
M. Paranthaman;X. Qiu;F. List;K. Kim;Y. Zhang;X. Li;S. Sathyamurthy;C. Thieme;M. Rupich
中科院分区：
文献类型：
--
作者：
M. Paranthaman;X. Qiu;F. List;K. Kim;Y. Zhang;X. Li;S. Sathyamurthy;C. Thieme;M. Rupich
本研究的主要目的是找到一个合适的替代解决方案为基础的种子层的标准RABiTS三层结构的物理气相沉积CeO 2帽/YSZ屏障/Y2 O3种子Ni-5%W金属带。在目前的工作中，我们已经确定CeO 2缓冲层作为一个潜在的替代Y2 O3种子。使用金属有机物沉积（MOD）工艺，我们已经生长出光滑，无裂纹，外延薄膜的CeO 2（纯和Zr，Cu和Gd掺杂）直接双轴织构Ni-5 W基板上短的长度。详细的XRD研究表明，一个单一的外延CeO 2相与下面的Ni-W衬底的纹理相比，略有改善的面外纹理可以实现在纯的，未掺杂的CeO 2样品。我们还展示了使用溅射法在纯CeO 2种子上生长YSZ阻挡层。溅射CeO 2帽层和MOD-YBCO薄膜外延生长在这些YSZ缓冲MOD-CeO 2/Ni-5 W衬底上。在77 K和0.01 T下，用MOD-CeO 2籽晶生长的0.8 μm厚MOD-YBCO薄膜获得了单位宽度的高临界电流Ic（264 A/cm）（临界电流密度Jc为3.3 MA/cm ~ 2）。这些结果表明，CeO 2薄膜可以直接生长在Ni-5 W衬底上，仍然支持高性能的YBCO涂层导体。这项工作为基于RABiTS的YBCO涂层导体生产低成本缓冲结构提供了一条途径。
The main objective of this research is to find a suitable alternate solution based seed layer for the standard RABiTS three-layer architecture of physical vapor deposited CeO2 cap/YSZ barrier/Y2O3 seed on Ni-5%W metal tape. In the present work, we have identified CeO2 buffer layer as a potential replacement for Y2O3 seeds. Using a metal-organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of CeO2 (pure and Zr, Cu and Gd-doped) directly on biaxially textured Ni-5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial CeO2 phase with slightly improved out-of-plane texture compared to the texture of the underlying Ni-W substrates can be achieved in pure, undoped CeO2 samples. We have also demonstrated the growth of YSZ barrier layers on pure CeO2 seeds using sputtering. Both sputtered CeO2 cap layers and MOD-YBCO films were grown epitaxially on these YSZ-buffered MOD-CeO2/Ni-5W substrates. High critical currents per unit width, Ic of 264 A/cm (critical current density, Jc of 3.3 MA/cm2) at 77 K and 0.01 T was achieved for 0.8 μm thick MOD-YBCO films grown on MOD-CeO2 seeds. These results indicate that CeO2 films can be grown directly on Ni-5W substrates and still support high performance YBCO coated conductors. This work holds promise for a route for producing low-cost buffer architecture for RABiTS based YBCO coated conductors.