Preparation of antimony sulfide semiconductor nanoparticles by pulsed laser ablation in liquid
Preparation of antimony sulfide semiconductor nanoparticles by pulsed laser ablation in liquid
复制标题
液体中脉冲激光烧蚀制备硫化锑半导体纳米颗粒
DOI：
10.1016/j.apsusc.2015.02.041
复制
发表时间：
2015
影响因子：
6.7
通讯作者：
Takeshi
中科院分区：
文献类型：
--
作者：
Sun;Ren-De and Tsuji;Takeshi
本文报道了在不使用任何表面活性剂或封端剂的情况下，通过脉冲激光烧蚀在液体中合成硫化锑（Sb 2S 3）半导体纳米颗粒。在水和有机溶剂中得到不同的结果。以水为原料，在氩气鼓泡除氧的条件下进行激光辐照，成功制备出化学组成为化学计量比的Sb 2S 3纳米颗粒。结果表明，由此获得的Sb 2S 3纳米颗粒不仅表现出低温结晶的特征，而且在低至200 °C的温度下也表现出低温熔融的特征。发现纳米颗粒涂覆的Sb 2S 3薄膜显示出良好的可见光吸收和令人满意的半导体性质（即，载流子迁移率和密度），这对于光伏应用是必要的。另一方面，在有机溶剂（例如，丙酮、乙醇），通过GC-MS分析发现，反应体系中存在CS2、CO和CH 4等副产物，说明激光辐照过程中Sb 2S 3和有机溶剂均发生了部分分解。将讨论可能的机制。
In this paper, we report on the synthesis of antimony sulfide (Sb2S3) semiconductor nanoparticles by pulsed laser ablation in liquid without using any surfactants or capping agents. Different results were obtained in water and organic solvents. In the case of water, Sb2S3nanoparticles with chemical compositions of stoichiometry were successfully prepared when laser irradiation was performed under the condition with the dissolved oxygen removed by argon gas bubbling. It was shown that thus-obtained Sb2S3nanoparticles exhibit features of not only low-temperature crystallization but also low-temperature melting at a temperature as low as 200 °C. Nanoparticle-coated Sb2S3thin films were found to show good visible light absorption and satisfying semiconductor properties (i.e., carrier mobility and density), which are essential for photovoltaic application. On the other hand, in the case of organic solvents (e.g., acetone, ethanol), such unexpected byproducts as CS2, CO and CH4were detected from the reaction system by GC-MS analysis, which suggests that both Sb2S3and organic solvents were partially decomposed during laser irradiation. The possible mechanism will be discussed.