Step wandering on Si(111) vicinal face near the 1 x 1<-->7 x 7 transition temperature with drift of adatoms parallel to steps.
Step wandering on Si(111) vicinal face near the 1 x 1<-->7 x 7 transition temperature with drift of adatoms parallel to steps.
复制标题
在 1 x 1<-->7 x 7 转变温度附近的 Si(111) 邻面上的阶跃漂移，吸附原子平行于阶跃漂移。
DOI：
10.1103/physreve.77.062601
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Masahide Sato
中科院分区：
文献类型：
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作者：
K. Ikawa;Masahide Sato
在高温下被1×1结构覆盖的Si(111)表面上，当温度低于结构转变温度(860℃)时出现7×7结构。在邻近面上，7 x 7 结构从台阶边缘的上侧展开。 1 x 1 结构上的扩散系数大于 7 x 7 结构上的扩散系数。在生长过程中，由于扩散系数的差异，会出现台阶漂移并形成垂直于台阶的凹槽。当平行于台阶施加直流电流时，凹槽倾斜。本文考虑直流电流引起的吸附原子漂移，研究了沟槽倾斜的可能性。
On a Si(111) surface, which is covered with the 1 x 1 structure at high temperature, the 7 x 7 structure appears when temperature is lower than the structural transition temperature (860 degrees C) . On the vicinal face, the 7 x 7 structure spreads from the upper side of the step edge. The diffusion coefficient on the 1 x 1 structure is larger than that on the 7 x 7 structure. During growth, due to the difference in the diffusion coefficient, step wandering occurs and grooves perpendicular to the steps are formed. When the direct electric current is added parallel to the step, the grooves are tilted. In this paper, with taking account of the drift of adatoms caused by the direct current, we study the possibility of tilting of the grooves.