Interface wandering in adsorbed and bulk phases, pure and impure

Interface wandering in adsorbed and bulk phases, pure and impure
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吸附相和本体相、纯相和不纯相中的界面漂移

DOI:
10.1039/f29868201569
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发表时间:
1986
期刊:
Journal of the Chemical Society, Faraday Transactions
影响因子:
--
通讯作者:
M. Fisher
M. Fisher
中科院分区:
--
文献类型:
--
作者:
M. Fisher

文献摘要

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在简要介绍了最近关于吸附层和表面层相变的实验,这些实验证实了平面伊辛模型理论的详细预测之后,讨论了纯和不纯体系在d=2,3和更大体维范围内界面的统计力学。解释了二维有序层中各种界面类型的存在,并指出了与之相关的润湿转变对公度熔化的意义。然后在漂移或粗化指数ζ(D)的基础上系统地发展了一般理论,该指数决定了纵向长度尺度的界面段的横向涨落的尺度L⊥,L∥,小⊥≃Lζ∥。在ζ方面,人们可以启发式地理解壁-界面和界面-界面的相互作用,从而获得描述公度-非公度转变、完全润湿行为和临界润湿转变的临界指数,包括长程范德华力的影响。ζ(D)对于热驱动界面涨落的众所周知的值1/2(3-d),以及对具有随机场、ζ=⅓(5-d)或随机键无序的淬灭随机介质的最新结果,然后产生了各种具体的预测,其中一些已经被精确的模型计算所验证,其中大多数代表开放的实验挑战。
After brief mention of recent experiments on phase transitions in adsorbed and surface layers which confirm detailed predictions of the theory of planar Ising models, the statistical mechanics of interfaces in d= 2,3, and more bulk dimensions is addressed for both pure and impure systems. The existence of various interface types in two-dimensional ordered layers is explained and the significance of the associated wetting transitions for commensurate melting is mentioned. The general theory is then developed systematically on the basis of the wandering or roughening exponent, ζ(d), which determines the scale, L⊥, of transverse fluctuations of an interface segment of longitudinal length scale, L∥, viaL⊥≃Lζ∥. In terms of ζ, one can understand heuristically wall–interface and interface–interface interactions, and thence obtain the critical exponents describing commensurate–incommensurate transitions, complete wetting behaviour, and critical wetting transitions, including the effects of long-range van der Waals forces. The well known value, ½(3–d), of ζ(d) for thermally driven interface fluctuations and recent results for quenched random media with random-field, ζ=⅓(5–d), or random-bond disorder, then yield a variety of concrete predictions, several already checked by exact model calculations, most representing open experimental challenges.