Improved precision in strain measurement using nanobeam electron diffraction
Improved precision in strain measurement using nanobeam electron diffraction
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DOI：
10.1063/1.3224886
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发表时间：
2009-09
影响因子：
4
通讯作者：
A. Béché;J. Rouviere;L. Clément;J. Hartmann
中科院分区：
文献类型：
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作者：
A. Béché;J. Rouviere;L. Clément;J. Hartmann
透射电子显微镜的改进已经将纳米束电子衍射转变为测量应变的简单而强大的技术。一个Si 0.69Ge 0.31层，生长到Si衬底上已被用来评估该技术的精度和准确度。使用FEI-Titan显微镜沿沿着110 nm带轴获得衍射图案，并使用专用软件进行分析。使用2.7 nm的探针尺寸和0.5 mrad的会聚角，应变精度达到6×10−4。在垂直于电子束的平面内的二维畸变张量已经得到。
Improvements in transmission electron microscopy have transformed nanobeam electron diffraction into a simple and powerful technique to measure strain. A Si0.69Ge0.31 layer, grown onto a Si substrate has been used to evaluate the precision and accuracy of the technique. Diffraction patterns have been acquired along a ⟨110⟩ zone axis using a FEI-Titan microscope and have been analyzed using dedicated software. A strain precision of 6×10−4 using a probe size of 2.7 nm with a convergence angle of 0.5 mrad has been reached. The bidimensional distortion tensor in the plane perpendicular to the electron beam has been obtained.