SSP: Eliminating Redundant Writes in Failure-Atomic NVRAMs via Shadow Sub-Paging
SSP: Eliminating Redundant Writes in Failure-Atomic NVRAMs via Shadow Sub-Paging
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DOI：
10.1145/3352460.3358326
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发表时间：
2019-10
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影响因子：
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通讯作者：
Yuanjiang Ni;Jishen Zhao;Heiner Litz;Daniel Bittman;E. Miller
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文献类型：
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作者：
Yuanjiang Ni;Jishen Zhao;Heiner Litz;Daniel Bittman;E. Miller
非挥发性访问记忆（NVRAM）技术正在缩小传统存储和内存之间的性能差距。它不可能的性能大量的开销，并通过将额外的数据写入NVRAM来造成更多的磨损。 NVRAM中的副本，（ii）使用页面合并最小化的存储开销，（iii）从关键路径上删除故障 - 原子开销，从而显着提高了NVRAM系统的性能。 ×，与最先进的日志记录设计相比，将额外的NVRAM在临界路径中的写入最多可减少10倍，并将交易吞吐量提高到1.6倍。
Non-Volatile Random Access Memory (NVRAM) technologies are closing the performance gap between traditional storage and memory. However, the integrity of persistent data structures after an unclean shutdown remains a major concern. Logging is commonly used to ensure consistency of NVRAM systems, but it imposes significant performance overhead and causes additional wear out by writing extra data into NVRAM. Our goal is to eliminate the extra writes that are needed to achieve consistency. SSP (i) exploits a novel cache-line-level remapping mechanism to eliminate redundant data copies in NVRAM, (ii) minimizes the storage overheads using page consolidation and (iii) removes failure-atomicity overheads from the critical path, significantly improving the performance of NVRAM systems. Our evaluation results demonstrate that SSP reduces overall write traffic by up to 1.8×, reduces extra NVRAM writes in the critical path by up to 10× and improves transaction throughput by up to 1.6×, compared to a state-of-the-art logging design.