Temperature dependence of the exciton lifetime in high‐purity silicon
Temperature dependence of the exciton lifetime in high‐purity silicon
复制标题
高纯硅中激子寿命的温度依赖性
DOI：
10.1063/1.91277
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发表时间：
1980
影响因子：
4
通讯作者：
R. Silver
中科院分区：
文献类型：
--
作者：
R. Hammond;R. Silver
我们观察到，高纯度硅中的激子寿命强烈依赖于温度。为了描述我们的数据，我们提出了一个理论，包括捕获，蒸发，和重组的激子在中性杂质。我们建议应用激子衰减测量来确定杂质含量、俘获截面和电子空穴液滴成核动力学。
We observe that the exciton lifetime in high‐purity silicon is strongly temperature dependent. To describe our data we propose a theory that includes capture, evaporation, and recombination of excitons at neutral impurities. We suggest applications of exciton‐decay measurements to the determination of impurity content, capture cross sections, and electron‐hole droplet nucleation kinetics.