Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride
Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride
复制标题
氮化镓上晶格排列氮氧化镓纳米层的形成及其在电子器件中的应用
DOI：
10.1002/adma.202208960
复制
发表时间：
2023-02-09
影响因子：
29.4
通讯作者：
Hua，Mengyuan
中科院分区：
文献类型：
--
作者：
Chen，Junting;Zhao，Junlei;Hua，Mengyuan
氮化镓(GaN)是一种很有前途的硅替代半导体材料，在光电子和电子技术中有着广泛的应用。然而，GaN表面的脆弱性是阻碍GaN基器件发展的关键因素，尤其是在器件的稳定性和可靠性方面。在这项研究中，通过原位两步“氧化-重构”过程将GaN表面转化为GaON外延纳米层，从而克服了这一挑战。O等离子体处理克服了GaN表面的化学惰性，连续热退火控制了动力学-热力学反应路径，生成了具有纤锌矿晶格的亚稳态GaN纳米薄膜。GaN生长的GaN纳米层是一种用于表面增强的定制结构，具有带隙宽、热力学稳定性高、与GaN衬底的价带偏移大等优点。这些物理性质可以进一步用于提高GaN基器件在各种应用中的性能，如电力系统、互补逻辑集成电路、光电化学分水和紫外光光电转换。
Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is a critical restriction that hinders the development of GaN‐based devices, especially in terms of device stability and reliability. In this study, this challenge is overcome by converting the GaN surface into a gallium oxynitride (GaON) epitaxial nanolayer through an in situ two‐step “oxidation–reconfiguration” process. The O plasma treatment overcomes the chemical inertness of the GaN surface, and sequential thermal annealing manipulates the kinetic–thermodynamic reaction pathways to create a metastable GaON nanolayer with a wurtzite lattice. The GaN‐derived GaON nanolayer is a tailored structure for surface reinforcement and possesses several advantages, including a wide bandgap, high thermodynamic stability, and large valence band offset with a GaN substrate. These physical properties can be further leveraged to enhance the performance of GaN‐based devices in various applications, such as power systems, complementary logic integrated circuits, photoelectrochemical water splitting, and ultraviolet photoelectric conversion.