Effect of ytterbium concentration on cw Yb:YAG microchip laser performance at ambient temperature – Part I: Experiments
Effect of ytterbium concentration on cw Yb:YAG microchip laser performance at ambient temperature – Part I: Experiments
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DOI：
10.1007/s00340-007-2796-2
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发表时间：
2007-10
期刊：
影响因子：
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通讯作者：
J. Dong;A. Shirakawa;K. Ueda;A. Kaminskii
中科院分区：
文献类型：
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作者：
J. Dong;A. Shirakawa;K. Ueda;A. Kaminskii
已在环境温度下研究了掺杂不同镱浓度（CYb=10、15 和 20 at. %）的 Yb:YAG 晶体的微芯片激光性能，无需主动冷却增益介质。针对 1 毫米厚、掺杂 10 at 的 YAG 进行高效激光振荡。 在 1030 和 1049 nm 处实现了 % Yb3+ 离子，斜率效率分别为 85% 和 81%。在没有充分冷却样品的情况下，重掺杂 Yb:YAG 晶体的激光性能受到终止激光水平下的热粒子数和室温下的热透镜效应的限制。具有不同Yb浓度和输出耦合的Yb:YAG微芯片激光器的激光发射光谱随着局部温升而变化，这是由于在不同泵浦水平下增益介质内部泵浦功率的吸收。
The microchip laser performance of Yb:YAG crystals doped with different ytterbium concentrations (CYb=10, 15, and 20 at. %) has been investigated at ambient temperature without active cooling of the gain media. Efficient laser oscillation for a 1-mm-thick YAG doped with 10 at. % Yb3+ions was achieved at 1030 and 1049 nm with slope efficiencies of 85% and 81%, correspondingly. The laser performance of heavy-doped Yb:YAG crystals was limited by the thermal population at terminated lasing level and thermal lens effect at room temperature without sufficient cooling of the samples. The laser emitting spectra of Yb:YAG microchip lasers with different Yb concentrations and output couplings are addressed with the local temperature rise, due to the absorption of the pump power inside the gain media under different pump levels.