A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure
A New InP/InGaAs Double Heterojunction Bipolar Transistor With a Step-Graded InAlGaAs Collector Structure
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DOI：
10.1109/led.2007.911286
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发表时间：
2008
影响因子：
4.9
通讯作者：
Tzu-Pin Chen;S. Cheng;C. Hung;K. Chu;Li-Yang Chen;T. Tsai;Wen-Chau Liu
中科院分区：
文献类型：
--
作者：
Tzu-Pin Chen;S. Cheng;C. Hung;K. Chu;Li-Yang Chen;T. Tsai;Wen-Chau Liu
An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (Ic = 10-12 A to Ic = 10-1 A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency fT = 72.7 GHz and the maximum oscillation frequency f max = 50 GHz are achieved for a nonoptimized device (AE = 6 times 6 mum2).
