Infrared Spectroscopic Study of Sputtered Tungsten Oxide Films

Infrared Spectroscopic Study of Sputtered Tungsten Oxide Films
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溅射氧化钨薄膜的红外光谱研究

DOI:
10.1006/jssc.1993.1296
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发表时间:
1993
影响因子:
5.4
通讯作者:
J. Lassègues
J. Lassègues
中科院分区:
工程技术1区
文献类型:
--
作者:
J. Paul;J. Lassègues

文献摘要

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最近对各种氧化钨薄膜的红外和拉曼光谱研究得出结论,要么形成W=O末端键,要么在质子插入后将这些键转化为W- oh基团。本文重新研究了漂白和有色溅射薄膜的红外透射和反射光谱,以解决以往相互矛盾的解释,并从分子水平上更好地了解电致变色的机理。新的结果证实了第一种解释,并允许我们证明H[sup +]或Li[sup +]的插入在W[sup 5+]中心周围产生了更短([大约]1.7[埃])和更长的([大约]2[埃])W- o键。这些结果与小极化子和价间电荷转移机制的概念是一致的。它们说明了W[sup 5+]位点周围的局部晶格畸变。对初始膜的老化过程进行了跟踪,并用H/D原位同位素交换进行了表征。
Recent infrared and Raman spectroscopic studies of various tungsten oxide films concluded either the formation of W=O terminal bonds or the transformation of such bonds into W-OH groups upon proton insertion. The infrared transmission and reflection spectra of bleached and colored sputtered films were reinvestigated in order to resolve the previous contradictory interpretations and for better insight into the mechanism of electrochromism at the molecular level. The new results confirm the first interpretation and allow us to show that H[sup +] or Li[sup +] insertion creates shorter ([approximately]1.7[angstrom]) and longer ([approximately]2 [angstrom]) W-O bonds around the W[sup 5+] centers. These results are in agreement with the concepts of small polaron and of intervalence charge transfer mechanism. They illustrate the local lattice distortion around a W[sup 5+] site. Aging of the initial films has also been followed and characterized by H/D in situ isotopic exchange.