Crystal growth of U2D2 solid3He
Crystal growth of U2D2 solid3He
复制标题
U2D2固体3He的晶体生长
DOI：
10.1007/bf00753822
复制
发表时间：
1994
影响因子：
2
通讯作者：
T. Mizusaki
中科院分区：
文献类型：
--
作者：
R. Nomura;H. H. Hensley;T. Matsushita;T. Mizusaki
在0.4 ~ 0.9 TN温度范围内，我们测量了超流B相中U_2D_2固体~ 3 He单晶的生长速率与固液化学势差Δμ的关系。生长速率与Δμ不成比例，Δμ小于约10 erg/cm 3时生长速率非常慢。对于较大的Δμ值，生长速率对温度的依赖性较弱，并且生长归因于由于螺旋位错引起的量子生长机制。熔化速度太快，无法定量测量，但在较高温度下较慢。
We have measured the growth rate of single crystal U2D2 solid3He in the superfluid B phase as a function of chemical potential difference Δμ between the solid and liquid for temperatures between 0.4 and 0.9 TN. The growth rate was not proportional to Δμ, with very slow growth rates for Δμ less than about 10 erg/cm3. For larger values of Δμ the growth rate depended weakly on temperature and the growth was attributed to a quantum growth mechanism due to screw dislocations. The melting rate was too fast to be measured quantitatively, but was slower at higher temperatures.