Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using (Bi, La)4Ti3O12 and HfO2 Buffer Layers
Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using (Bi, La)4Ti3O12 and HfO2 Buffer Layers
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DOI：
10.1143/jjap.41.6886
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发表时间：
2002-11
影响因子：
1.5
通讯作者：
Takuya Suzuki;E. Tokumitsu
中科院分区：
文献类型：
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作者：
Takuya Suzuki;E. Tokumitsu
我们报道了金属-铁电-金属-绝缘体-半导体（MFMIS）结构，使用（Bi，La）4 Ti 3 O 12（BLT）薄膜与HfO 2缓冲层的单晶体管（1 T）型铁电存储器的应用。由于需要高电容缓冲层来实现MFMIS栅极结构的高密度，因此我们使用HfO 2层作为绝缘体材料。采用溶胶-凝胶法制备了BLT铁电薄膜，射频溅射法制备了HfO 2缓冲层。结果表明，Pt/HfO 2/n-Si MIS结构的等效氧化层厚度（EOT）为3.5 nm，漏电流在10-9 A/cm 2范围内。的Pt/BLT/Pt/HfO 2/n-Si MFMIS二极管的电容-电压（C-V）特性的SI/SF面积比为6揭示了一个大的存储窗口为3 V，由于BLT薄膜的铁电性能。
We report the electrical properties of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using (Bi, La)4Ti3O12 (BLT) thin films with HfO2 buffer layers for one-transistor(1T)-type FeRAM applications. Since high-capacitance buffer layers are required to realize the high density of MFMIS gate structures, we used a HfO2 layer as an insulator material. Ferroelectric BLT layers were fabricated by the sol-gel technique and HfO2 buffer layers were deposited by the RF sputtering method. It is demonstrated that Pt/HfO2/n-Si MIS structures have a low leakage current in the 10-9 A/cm2 range with an equivalent oxide thickness (EOT) of 3.5 nm. The capacitance–voltage (C–V) characteristics of the Pt/BLT/Pt/HfO2/n-Si MFMIS diode with an SI/SF area ratio of 6 reveal a large memory window of 3 V due to the ferroelectric properties of the BLT films.