Sputtered Ag thin films with modified morphologies: Influence on wetting property
Sputtered Ag thin films with modified morphologies: Influence on wetting property
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DOI：
10.1016/j.apsusc.2015.04.052
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发表时间：
2015-08
影响因子：
6.7
通讯作者：
P. Dutheil;A. Thomann;T. Lecas;P. Brault;M. Vayer
中科院分区：
文献类型：
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作者：
P. Dutheil;A. Thomann;T. Lecas;P. Brault;M. Vayer
将厚度范围为 3 nm 至 33 nm 的银薄膜溅射沉积到硅片和钨层上。这些W层之前是在相同的直流磁控溅射沉积系统中在不同的实验条件（氩气压力、靶材到基材的距离）下合成的，以稳定不同的表面形貌。 SEM 观察和 AFM 图像表明，Ag 薄膜的生长模式在 Si 衬底和最光滑的 W 层上相似，而对于由尖锐晶粒制成的粗糙 W 层则有所修改。当在高温下进行沉积时，W 层形态对 Ag 薄膜生长的影响得到了明显的证明。可以看出，在各种形态的基材上进行沉积可以调整银沉积物的润湿特性。
Silver thin films with thickness ranging from 3 nm to 33 nm were sputter deposited onto silicon wafers and tungsten layers. Those W layers were previously synthesized in the same DC magnetron sputter deposition system with various experimental conditions (argon pressure, target to substrate distance) in order to stabilize different surface morphologies. SEM observations and AFM images showed that the growth mode of Ag films is similar on Si substrates and on the smoothest W layers, whereas it is modified for rough W layers made of sharp grains. The effect of the W layer morphology on Ag film growth was clearly evidenced when the deposition took place at high temperature. It is seen that performing the deposition onto substrates of various morphologies allows tailoring the wetting property of the Ag deposit.