Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters
Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters
复制标题
InP基高电子迁移率晶体管的光学响应及其在高速光电探测器和信号转换器中的应用
DOI：
10.1109/iciprm.2007.381128
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
T. Enoki
中科院分区：
文献类型：
--
作者：
H. Murata;N. Kobayashi;Y. Okamura;T. Kosugi;T. Enoki
用1550 nm聚焦激光束照射InP基HEMT表面，观察到漏电流、小信号增益和栅电容的增加。它们导致高速光电探测器和信号转换器。
The increases of drain current, small signal gain, and gate capacitance in InP-based HEMTs were observed clearly by irradiating a 1550 nm focused laser beam onto their surface. They lead to high-speed photo-detectors and signal converters.