Single-electron transistor as a radio-frequency mixer
Single-electron transistor as a radio-frequency mixer
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作为射频混频器的单电子晶体管
DOI：
10.1063/1.1493221
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发表时间：
2002
影响因子：
4
通讯作者：
A. Cleland
中科院分区：
文献类型：
--
作者：
R. Knobel;C. Yung;A. Cleland
我们证明了使用的单电子晶体管作为射频混频器，基于栅极电荷的电流的非线性依赖。该混频器可用于高频、超灵敏的电荷测量，频率范围宽且可调。我们演示了混频器的操作，使用光刻定义的薄膜铝晶体管，在超导和正常状态的铝，从10到300 MHz的频率。我们操作的设备作为零差检测器和作为相敏外差混频器。我们展示了<4 × 10 − 3 e/Hz的电荷灵敏度，受室温电子学的限制。优化混频器的理论电荷灵敏度为1.5 × 10 − 5 e/Hz。
We demonstrate the use of the single-electron transistor as a radio-frequency mixer, based on the nonlinear dependence of current on gate charge. This mixer can be used for high-frequency, ultrasensitive charge measurements over a broad and tunable range of frequencies. We demonstrate operation of the mixer, using a lithographically defined thin-film aluminum transistor, in both the superconducting and normal states of aluminum, over frequencies from 10 to 300 MHz. We have operated the device both as a homodyne detector and as a phase-sensitive heterodyne mixer. We demonstrate a charge sensitivity of <4×10−3 e/Hz, limited by room-temperature electronics. An optimized mixer has a theoretical charge sensitivity of ≲1.5×10−5 e/Hz.