1, 3, 5-TRIS [4-(tert-BUTOXYCARBONYLMETHOXY)- PHENYL]BENZENE AS A NOVEL ELECTRON-BEAM POSITIVE RESIST FOR NANOMETER LITHOGRAPHY
1, 3, 5-TRIS [4-(tert-BUTOXYCARBONYLMETHOXY)- PHENYL]BENZENE AS A NOVEL ELECTRON-BEAM POSITIVE RESIST FOR NANOMETER LITHOGRAPHY
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1, 3, 5-TRIS [4-(叔丁氧基甲氧基)-苯基]苯作为纳米光刻的新型电子束正抗蚀剂
DOI：
10.2494/photopolymer.9.57
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发表时间：
1996
影响因子：
0.8
通讯作者：
Y. Shirota
中科院分区：
文献类型：
--
作者：
Motoko Yoshiiwa;H. Kageyama;F. Wakaya;M. Takai;K. Gamo;Y. Shirota
半导体器件中的最小特征尺寸正变得越来越小。64 Mbit DRAM的制造要求0.35 μm的分辨率，未来将需要纳米尺寸的光刻图案。决定光刻工艺的分辨率极限的因素之一是抗蚀剂材料的颗粒尺寸。为了获得纳米尺寸的光刻图案，期望减小抗蚀剂材料的颗粒尺寸。有机聚合物已被用作抗蚀剂材料。聚合度为105的有机聚合物的粒径粗略计算为10 nm [1]。这意味着在100 nm光刻图案中存在大于10%的波动。低分子量有机抗蚀剂材料的开发是实现纳米光刻技术的突破口。然而，低分子量有机化合物通常不形成均匀稳定的无定形膜，因为它们倾向于容易结晶。最近，低聚物、杯芳烃衍生物[2]和C60的真空蒸发膜[3]已被报道用作具有高分辨率的负电子束抗蚀剂。本文报道了一种新型的低分子量有机化合物1，3，5-三[4-（叔丁氧羰基甲氧基）苯基]苯（BCMTPB），它可用作正型电子束抗蚀剂材料。以1，3，5-三（4-羟基苯基）苯和氯乙酸叔丁酯为原料，通过缩合反应合成了新化合物BCMTPB，并通过各种光谱、质谱和元素分析对其结构进行了鉴定。发现BCMTPB容易形成无定形玻璃，如通过差示扫描量热法所证明的。当加热通过从苯/己烷中重结晶获得的BCMTPB的结晶样品时，在141 °C下观察到由于熔融引起的吸热峰。当所得各向同性液体在空气中静置冷却时，其经由过冷液体形成非晶玻璃。当无定形的
The minimum feature size in semiconductor devices is becoming smaller and smaller. A 0.35 μm resolution is required for the fabrication of 64 Mbit DRAM, and nanometer-size lithographic patterns will be required in the future. One of the factors determining the resolution limit of the lithography process is the particle size of resist materials. In order to obtain nanometer-size lithographic patterns, it is desirable to reduce particle size of the resist materials. Organic polymers have been used as resist materials. The particle size of organic polymers with a degree of polymerization of 105 is roughly calculated to be 10 nm [1]. This means that there is more than 10 % fluctuation in 100 nm lithographic patterns. A breakthrough to achieve nanometer-size lithography is to develop lowmolecular-weight organic resist materials. However, low-molecular-weight organic compounds generally do not form uniform stable amorphous films, since they tend to crystallize readily. Very recently, an oligomer, a calixarene derivative [2], and a vacuum evaporated film of C60 [3] have been reported to function as negative electron-beam resists with high resolution. We report here a novel low-molecular-weight organic compound, 1,3,5-tris[4-(tert-butoxycarbonylmethoxy)phenyl]benzene(BCMTPB), which functions as a positive-type electron-beam resist material. The new compound BCMTPB was synthesized by the condensation reaction of 1,3,5-tris(4-hydroxyphenyl)benzene with chloroacetic acid tert-butyl ester and identified by various spectroscopies, mass spectrometry and elemental analysis. BCMTPB was found to form readily an amorphous glass, as evidenced by differential scanning calorimetry. When the crystalline sample of BCMTPB obtained by recrystallization from benzene/hexane was heated, an endothermic peak due to melting was observed at 141 °C. When the resulting isotropic liquid was cooled on standing in air, it formed an amorphous glass via a supercooled liquid. When the amorphous