ESD Behavior of Tunnel FET Devices
ESD Behavior of Tunnel FET Devices
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DOI：
10.1109/ted.2016.2630079
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发表时间：
2017
影响因子：
3.1
通讯作者：
N. K. Kranthi;M. Shrivastava
中科院分区：
文献类型：
--
作者：
N. K. Kranthi;M. Shrivastava
本文首次研究了接地栅隧道场效应晶体管（ggTFET）的静电放电（ESD）行为，并对ESD应力条件下的器件工作、三维结构和失效进行了详细的物理分析。使用2-D和3-D技术计算机辅助设计模拟研究了结击穿、器件导通、电压骤回以及最后的独特失效机制的电流和时间演化。详细介绍了带间隧穿、雪崩倍增和热载流子产生导致电压骤回和失效的相互作用。此外，电热不稳定性引发的双折射和snapback发现在ggTFET的解释。各种技术和器件设计参数的影响的ESD行为和稳健性的TFFETs进行了讨论。这有助于制定指导方针，以设计ESD鲁棒TFTs，实现高效的保护概念。最后讨论了ggTFET器件的电荷器件模型行为。
For the first time, we present the electrostatic discharge (ESD) behavior of grounded gate tunnel FET (ggTFET) with detailed physical insight into the device operation, 3-D filamentation and failure under ESD stress conditions. Current as well as time evolution of the junction breakdown, device turn-ON, voltage snapback, and finally the unique failure mechanism is studied using both 2-D and 3-D technology computer aided design simulations. The interaction between the band-to-band tunneling, avalanche multiplication, and thermal carrier generation leading to voltage snapback and failure is presented in detail. In addition, electro-thermal instability initiated filamentation and snapback discovered in the ggTFET is explained. The impact of various technology and device design parameters on the ESD behavior and robustness of TFETs is discussed. This has helped developing guidelines to design ESD robust TFETs for efficient protection concepts. Finally, the charge device model behavior of ggTFET device is discussed.