Comparative studies on the growth conditions of CeO2 and Y2O3 buffer layers on NiW tapes
Comparative studies on the growth conditions of CeO2 and Y2O3 buffer layers on NiW tapes
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DOI：
10.1088/0953-2048/17/1/026
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发表时间：
2004
影响因子：
3.6
通讯作者：
Sunme Lim;Hyowook Kim;K. Chung;B. Lee;D. Youm
中科院分区：
文献类型：
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作者：
Sunme Lim;Hyowook Kim;K. Chung;B. Lee;D. Youm
我们比较研究了双向织构Ni和NiW带上Y2O3薄膜和CeO2薄膜的生长条件。我们发现，CeO2 薄膜适当生长的衬底温度和氧分压的窗口比 Y2O3 薄膜更宽。 XRD数据表明，两种薄膜的面内和面外织构质量几乎相似。 SEM观察表明CeO2薄膜的表面比Y2O3薄膜的表面更光滑。 CeO2 薄膜相对于Y2O3 薄膜的劣势是裂纹形成。然而，我们发现如果使用直流反应溅射在CeO2 薄膜上生长YSZ 覆盖层，则在YSZ 薄膜的表面上不再观察到裂纹。
We comparatively studied the growth conditions of Y2O3 films and CeO2 films on biaxially textured Ni and NiW tapes. We found that the windows of both substrate temperatures and oxygen partial pressures for the proper growth of CeO2 films were wider than those of Y2O3 films. XRD data showed that the qualities of in-plane and out-of-plane textures of the two types of films were almost similar. The SEM observations indicated that the surface of the CeO2 films was smoother than those of Y2O3 films. The inferiority of CeO2 films to Y2O3 films was crack formation. However, we found that if YSZ over-layers were grown on the CeO2 films using dc-reactive sputtering, the cracks were not observed on the surface of the YSZ films anymore.