Verilog-A modeling of Organic Electrochemical Transistors
Verilog-A modeling of Organic Electrochemical Transistors
复制标题
有机电化学晶体管的 Verilog-A 建模
DOI：
10.1109/mocast.2017.7937645
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
G. Malliaras
中科院分区：
文献类型：
--
作者：
P. Sideris;S. Siskos;G. Malliaras
介绍了一种用高级模拟硬件描述语言Verilog-A编写的有机电化学晶体管模型。使用晶体管DC特性的多项式近似，可以对器件操作中的各种现象进行建模。实验和模拟数据之间的误差估计非常低的所有情况下的模拟结果。将该模型导入HSPICE中，对多个测试电路进行了仿真。
An Organic Electrochemical Transistor model written in Verilog-A, a high level analog hardware description language, is presented. Using a polynomial approximation of the transistor DC characteristics, various phenomena in the operation of the device could be modeled. The error between experimental and simulated data was estimated very low for all cases of the simulated results. The model was imported in HSPICE and several test circuits were simulated.