Time-dependent degradation of MOSFET channel mobility following pulsed irradiation

Time-dependent degradation of MOSFET channel mobility following pulsed irradiation
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脉冲辐照后 MOSFET 沟道迁移率随时间下降

DOI：
10.1109/23.45369
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
H. E. Boesch
H. E. Boesch
中科院分区：
--
文献类型：
--
作者：
F. B. McLean;H. E. Boesch

文献摘要

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本文提出了MOSFET沟道载流子迁移率随时间变化的模型。它包括陷阱空穴（Δ N/sub OT/）去除（退火）和界面陷阱（Δ N/sub IT/）随时间的积累的影响。根据该模型，对n沟道器件从10/sup-4/ s开始的几组时间分辨的双稳态数据进行了检验。结果表明，即使Delta N/sub IT/通常在后期主导迁移率的变化，但在早期（>
A model is presented for the time-dependent mobility of channel carriers in MOSFETs following pulsed irradiation. It includes the effects of both trapped hole ( Delta N/sub OT/) removal (annealing) and the time-dependent buildup of interface traps ( Delta N/sub IT/). Several sets of time-resolved transconductance data beginning at 10/sup -4/ s are examined for n-channel devices in light of the model. It is shown that, even though Delta N/sub IT/ generally dominates the change in mobility at late time, at early times ( >