300-GHz Direct and Heterodyne Active Imagers Based on 0.13-μm SiGe HBT Technology
300-GHz Direct and Heterodyne Active Imagers Based on 0.13-μm SiGe HBT Technology
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DOI：
10.1109/tthz.2017.2715419
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发表时间：
2017-06
影响因子：
3.2
通讯作者：
Daekeun Yoon;Jungsoo Kim;J. Yun;M. Kaynak;B. Tillack;J. Rieh
中科院分区：
文献类型：
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作者：
Daekeun Yoon;Jungsoo Kim;J. Yun;M. Kaynak;B. Tillack;J. Rieh
本研究开发了基于0.13 μm SiGe HBT技术的300 ghz直接外差成像仪，用于主动成像应用。基于平方律原理的直接成像仪在315 GHz时的最大响应度为6121 V/W，最小噪声等效功率（NEP）为21.2 pW/Hz1/2。该外差成像仪由混频器、本振、中频放大器和中频检测器组成，在300 GHz时的最大响应率为322 kV/W，最小NEP为3.9 pW/Hz1/2。直接成像仪的总直流功耗为0.6 mW，而外差成像仪的功耗为21 mW。包含片上天线的直接成像仪和外差成像仪的芯片面积分别为460 × 410和610 × 610 μm2。为了比较两种成像仪在成像应用中的性能，采集了两种成像仪的图像，并与信号源的不同输出功率水平进行了比较。实验结果表明，在信号源功率不足够大的情况下，外差式成像仪具有较好的成像质量。
300-GHz direct and heterodyne imagers based on a 0.13-μm SiGe HBT technology were developed for active imaging applications in this work. The direct imager, which is based on the square-law principle, shows a maximum responsivity of 6121 V/W and a minimum noise equivalent power (NEP) of 21.2 pW/Hz1/2 at 315 GHz. The heterodyne imager, which consists of a mixer, a local oscillator, an IF amplifier, and an IF detector, exhibits a maximum responsivity of 322 kV/W and a minimum NEP of 3.9 pW/Hz1/2 at 300 GHz. Total dc power consumption of the direct imager is 0.6 mW, while the heterodyne imager consumes 21 mW. The chip areas of the direct and heterodyne imagers including the on-chip antenna are 460 × 410 and 610 × 610 μm2, respectively. To compare the performance of the two types of imagers for imaging applications, images from both imagers were acquired and compared with various output power levels of the signal source. It was demonstrated that the heterodyne imager shows much better image quality, especially when the signal source power is not sufficiently high.