Fabrication and characterization of a biologically sensitive field-effect transistor using a nanocrystalline diamond thin film
Fabrication and characterization of a biologically sensitive field-effect transistor using a nanocrystalline diamond thin film
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使用纳米晶金刚石薄膜的生物敏感场效应晶体管的制造和表征
DOI：
10.1063/1.1808885
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发表时间：
2004
影响因子：
4
通讯作者：
R. Hamers
中科院分区：
文献类型：
--
作者：
Wenshao Yang;R. Hamers
我们报道了一种使用纳米晶金刚石薄膜的生物敏感场效应晶体管（Bio-FET）的制造和表征。通过将人免疫球蛋白G （IgG）连接到金刚石表面，提供了生物分子识别能力。电学测量揭示了场效应晶体管的特性。采用抗IgM和抗igg两种抗体检测其生物分子识别和特异性。电学测量表明，在igg修饰的金刚石上制成的Bio-FET器件对抗igg抗体具有特异性反应。我们的研究结果证明了利用生物修饰的金刚石薄膜制造生物场效应晶体管器件的能力。
We report the fabrication and characterization of a biologically sensitive field-effect transistor (Bio-FET) using a nanocrystalline diamond thin film. Biomolecular recognition capability was provided by linking human immunoglobulin G (IgG) to the diamond surface. Electrical measurements reveal behavior characteristic of field-effect transistors. The biomolecular recognition and specificity characteristics were tested using the two antibodies anti IgM and anti-IgG. Electrical measurements show that the Bio-FET device made on an IgG-modified diamond exhibits a response specific to the anti-IgG antibody. Our results demonstrate the ability to fabricate a bio-FET device using a biologically modified diamond thin film.