Multiphonon-Electron Coupling Enhanced Defect Generation and Breakdown Mechanism in MOL New Spacer Dielectrics for 7nm/5nm Technology Nodes and Beyond
Multiphonon-Electron Coupling Enhanced Defect Generation and Breakdown Mechanism in MOL New Spacer Dielectrics for 7nm/5nm Technology Nodes and Beyond
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多声子-电子耦合增强了 MOL 中适用于 7nm/5nm 及以上技术节点的新型间隔电介质的缺陷产生和击穿机制
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
Miaomiao Wang
中科院分区：
文献类型：
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作者：
E. Wu;R. Southwick;S. Mehta;Baozhen Li;Miaomiao Wang
我们研究了多声子-电子耦合增强的中间线（MOL）间隔层（Si 3 N4，SiBCN和SiOCN）中的缺陷产生过程和击穿（BD）。与传统的Poole-Frenkel过程不同，我们发现非弹性多声子辅助隧穿在这些缺陷晶体的初始和应力后电子传导过程中起着关键作用。更重要的是，我们证明了缺陷的产生过程遵循一个普遍的过程中，这些看似非常不同的厚度之间。我们发现，多声子-电子耦合是负责增强的缺陷产生率，由于高能量电子在阳极，从而触发物种释放诱导BD。
We investigate multiphonon-electron coupling enhanced defect generation process and breakdown (BD) in middle-of-line (MOL) spacer dielectrics (Si3N4, SiBCN, and SiOCN). Rather than traditional Poole-Frenkel process, we report inelastic multiphonon assisted tunneling plays a key role in conduction process in these defective dielectrics in both initial and post-stress electron conduction. More importantly, we demonstrate defect generation process follows a universal process independent of thickness among these seemingly very different dielectrics. We show multiphonon-electron coupling is responsible for the enhanced defect generation rate due to high-energy electrons at the anode, thus triggering to specie-release induced BD.