Polarization Control in Silicon Photonic Waveguide Components Using Cladding Stress Engineering
Polarization Control in Silicon Photonic Waveguide Components Using Cladding Stress Engineering
复制标题
使用包层应力工程控制硅光子波导元件的偏振
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
Danxia Xu
中科院分区：
文献类型：
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作者：
Danxia Xu
本章回顾SOI脊波导双折射的特性，由波导横截面的几何形状，包层应力水平，和包层厚度。在诸如二氧化硅和氮化硅的电介质包覆膜中的典型应力水平使得应力诱导的双折射具有与波导几何双折射相当的量值。因此，通过平衡这两个因素，可以精确地控制总的波导双折射。这种技术的应用，实现偏振独立的各种光子元件的描述，以及偏振分裂的一个例子。被动和主动调谐的应力诱导双折射进行了讨论。利用双折射调谐提高光学参量过程的效率和应力诱导的普克尔斯电光效应也作了简要的讨论。
This chapter reviews the characteristics of SOI ridge waveguide birefringence, as governed by the waveguide cross-section geometry, the cladding stress level, and cladding thickness. Typical stress levels in dielectric cladding films such as silicon dioxide and silicon nitride are such that the stress-induced birefringence is of comparable magnitude to the waveguide geometrical birefringence. Therefore the total waveguide birefringence can be precisely controlled by counter-balancing these two factors. The application of this technique for achieving polarization independence in a variety of photonic components is described, as well as an example of polarization splitting. Passive and active tuning of the stress-induced birefringence is discussed. The use of birefringence tuning to enhance the efficiency in optical parametric processes and stress-induced Pockels electro-optic effect are also briefly addressed.