Evaluation of 1.7 kV SiC MOSFETs for a regenerative cascaded H-bridge multilevel converter cell
Evaluation of 1.7 kV SiC MOSFETs for a regenerative cascaded H-bridge multilevel converter cell
复制标题
用于再生级联 H 桥多电平转换器单元的 1.7 kV SiC MOSFET 评估
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
D. Dujić
中科院分区：
文献类型：
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作者：
Nicolai Hildebrandt;M. Petković;D. Dujić
高保真交流电网仿真器允许在接近现实预期的条件下对各种设备进行早期测试和鉴定。在中压高功率水平下实现这一点与某些挑战有关，本文讨论了其中一些挑战。基于著名的四象限Robicon拓扑结构的中压电网仿真器被认为是交流电网仿真器的实现平台。为了实现具有足够高的控制带宽的高分辨率AC波形，将基于SiC的单元设计与纯Si和混合（Si+SiC）设计进行比较。将SiC器件用于输出H桥级允许显著更高的开关频率，提高可实现的控制带宽并提高仿真器输出电压的保真度。
High fidelity AC grid emulators allow early testing and qualification of various equipment under conditions close to those expected in reality. Realizing this at medium voltage high power level is associated with certain challenges, some of which are discussed in this paper. Medium voltage grid emulator based on the well-known four-quadrant Robicon topology is considered as platform for realization of the AC grid emulator. To achieve high resolution AC waveform with sufficiently high control bandwidth, SiC based cell design is compared with pure Si and Hybrid (Si+SiC) designs. Using SiC devices for the output H-bridge stage allows significantly higher switching frequencies, improving achievable control bandwidth and improving fidelity of emulator output voltage.
基于开关模式转换器的高性能功率硬件在环电网仿真器
DOI：
10.1109/spec.2016.7846010
发表时间：
2016
期刊：
2016 IEEE 2nd Annual Southern Power Electronics Conference (SPEC)
影响因子：
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作者：
R. Kennel
通讯作者：
R. Kennel