Island size scaling in InAs/GaAs self-assembled quantum dots
Island size scaling in InAs/GaAs self-assembled quantum dots
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DOI：
10.1103/physrevlett.80.2650
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发表时间：
1998-03-23
影响因子：
8.6
通讯作者：
Yokoyama, N
中科院分区：
文献类型：
--
作者：
Ebiko, Y;Muto, S;Yokoyama, N
研究了用分子束外延的stranski - krstanow模式获得的无位错的InAs/GaAs自组装量子点的簇大小分布。在较宽的网点密度范围内均可获得相同的缩放函数。尺度函数表明，对所研究的所有量子点密度而言，簇大小波动按平均大小归一化后是恒定的。该缩放函数与亚单层同外延生长的缩放函数相似，表明应变不是决定量子点簇尺寸分布的主要因素。
We studied the cluster size distribution of dislocation-free InAs/GaAs self-assembled quantum dots obtained by the Stranski-Krastanow mode of molecular beam epitaxy. The same scaling function was obtained over a wide range of dot density. The scaling function indicated that the cluster size fluctuation, normalized by the average size, is constant for all the quantum dot densities studied. The resemblance of the scaling function to that of the submonolayer homoepitaxial growth implies that the strain is not the essential factor determining the cluster size distribution of quantum dots.