Effect of Additional Oxygen for the Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure

Effect of Additional Oxygen for the Formation of Silicon Oxynitride Using Nitrogen Plasma Generated near Atmospheric Pressure
复制标题

附加氧气对利用近大气压产生的氮等离子体形成氮氧化硅的影响

DOI:
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发表时间:
2006
期刊:
Japanese Journal of Applied Physics 45
影响因子:
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通讯作者:
Ryoma Hayakawa
Ryoma Hayakawa
中科院分区:
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文献类型:
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作者:
T.Ohashi;M.Ishida;S.Sasaki;Y.Ishisaki;K.Mitsuda;et al.;Ryoma Hayakawa;Y. Kodama;Ryoma Hayakawa

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