Gallium arsenide (GaAs) quantum photonic waveguide circuits
Gallium arsenide (GaAs) quantum photonic waveguide circuits
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DOI：
10.1016/j.optcom.2014.02.040
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发表时间：
2014-03
影响因子：
2.4
通讯作者：
Jianwei Wang;A. Santamato;P. Jiang;D. Bonneau;E. Engin;J. Silverstone;M. Lermer;J. Beetz;M. Kamp;S. Hofling;M. G. Tanner;C. M. Natarajan;R. Hadfield;S. Dorenbos;V. Zwiller;J. O'Brien;M. Thompson
中科院分区：
文献类型：
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作者：
Jianwei Wang;A. Santamato;P. Jiang;D. Bonneau;E. Engin;J. Silverstone;M. Lermer;J. Beetz;M. Kamp;S. Hofling;M. G. Tanner;C. M. Natarajan;R. Hadfield;S. Dorenbos;V. Zwiller;J. O'Brien;M. Thompson
集成量子光子学是未来实用化和大规模量子信息处理技术的一种很有前途的方法，具有在芯片上产生、操纵和测量光的复杂量子态的前景。砷化镓(GaAs)材料系统是一个很有前途的技术平台，已经成功地展示了包括波导集成单光子源和集成单光子探测器在内的关键部件。然而，到目前为止，在这种材料系统中还没有研究过能够操纵光的量子态的量子电路。在这里，我们报道了操纵单光子态和双光子态的砷化镓光子电路。在GaAs定向耦合器中观察到可见度为94.9±1.3%的双光子量子干涉。在利用电光普克尔效应的马赫-曾德尔干涉仪中，观察到了可见度分别为98.6±1.3%和84.4±1.5%的经典干涉条纹和量子干涉条纹。这项工作为基于GaAs材料系统的全集成量子技术平台铺平了道路。
Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach–Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.