RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
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DOI：
10.1143/jjap.41.2611
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发表时间：
2002-04
影响因子：
1.5
通讯作者：
H. Umezawa;T. Arima;N. Fujihara;H. Taniuchi;H. Ishizaka;M. Tachiki;C. Wild;P. Koidl;H. Kawarada
中科院分区：
文献类型：
--
作者：
H. Umezawa;T. Arima;N. Fujihara;H. Taniuchi;H. Ishizaka;M. Tachiki;C. Wild;P. Koidl;H. Kawarada
首次证实了表面沟道多晶金刚石金属-绝缘体-半导体场效应晶体管（MISFET）的射频器件潜力。利用自对准栅极场效应晶体管（FET）制造工艺，在0.7 µm栅极长度下实现了70 mS/mm的有效导通电阻。该FET还显示出分别为2.7和3.8 GHz的高fT和fmax。然而，击穿电压和fmax/fT比低于同质外延层，因为在漏极区中的晶界处的寄生电容。由于沟道迁移率的波动，观察到gm和fT的波动。为了实现高频下的高功率工作，需要在单个晶粒上制造FET以减小寄生电容。
The RF device potential of surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors (MISFETs) is demonstrated for the first time. Utilizing a self-aligned gate field-effect transistor (FET) fabrication process, effective transconductance of 70 mS/mm is realized at 0.7 µm gate length. This FET also shows high fT and fmax of 2.7 and 3.8 GHz, respectively. However, the breakdown voltage and fmax/fT ratio are lower than those for the homoepitaxial layer because of the parasitic capacitance at the grain boundaries in the drain region. Because of the fluctuation of channel mobility, the fluctuation of gm and fT is observed. In order to realize high-power operation at high frequency, the fabrication of the FET on a single grain to reduce the parasitic capacitance is required.