Growth of manganese silicide layers on Si substrates using MnCl2 source
Growth of manganese silicide layers on Si substrates using MnCl2 source
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DOI：
10.1002/pssa.200824246
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发表时间：
2009-02
期刊：
影响因子：
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通讯作者：
Junhua Hu;Takanori Kurokawa;T. Suemasu;S. Takahara;M. Itakura;H. Tatsuoka
中科院分区：
文献类型：
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作者：
Junhua Hu;Takanori Kurokawa;T. Suemasu;S. Takahara;M. Itakura;H. Tatsuoka
Manganese silicide layers were grown on Si(111) substrates by exposure of the Si substrates to MnCl2 vapor. The thermal treatment temperature of 500 °C provided the appropriate growth conditions to form the Mnx Siy (y /x ∼ 2) similar to MnSi1.7 phase. The epitaxial Mnx Siy (y /x ∼ 2) islands grew during the initial growth stage. As the heat treatment time increased, the epitaxial layer became continuous and covered the entire Si(111) substrate surface at the appropriate heat treatment temperature of 500 °C, even though the additional growth of the Mnx Siy (y /x ∼ 1) deposit similar to MnSi phase occurred when the thickness of Mn‐silicide layers exceeded the limited layer thickness. These results encouraged us to grow large area Mnx Siy (y /x ∼ 2) layers on Si substrates using this simple growth technique. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
