The fabrication of a patterned ZnO nanorod array for high brightness LEDs
The fabrication of a patterned ZnO nanorod array for high brightness LEDs
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DOI：
10.1088/0957-4484/21/35/355304
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发表时间：
2010-09
期刊：
影响因子：
3.5
通讯作者：
Hyoungwon Park;K. Byeon;Kiyeon Yang;J. Cho;Heon Lee
中科院分区：
文献类型：
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作者：
Hyoungwon Park;K. Byeon;Kiyeon Yang;J. Cho;Heon Lee
在本研究中，图案化的ZnO纳米棒阵列形成在GaN基发光二极管（LED）的ITO层上，以提高LED的光提取效率。双层压印树脂图案用于在ITO层上选择性生长ZnO纳米棒阵列。与在图案化蓝宝石衬底（PSS）上生长的传统LED相比，在ITO层上沉积毯式ZnO层使LED的光提取效率提高了约10%。ZnO纳米棒层在毯覆ZnO层上的进一步生长使LED的光提取效率增加了约23%。在图案化ZnO纳米棒层形成在毯覆ZnO层上的情况下，光提取效率增加了约34%。器件的这些增强是由于ZnO层中折射率的调制和表面粗糙化效应引起的，因为图案的独特设计是纳米图案中的纳米结构，导致在LED表面上形成许多逃逸锥。
In this study, a patterned ZnO nanorod array was formed on the ITO layer of GaN-based light-emitting diodes (LEDs), to increase the light extraction efficiency of the LED. The bi-layer imprinted resin pattern was used for selective growth of the ZnO nanorod array on the ITO layer. Compared to conventional LEDs grown on patterned sapphire substrate (PSS), the deposition of the blanket ZnO layer on the ITO layer increased the light extraction efficiency of the LED by about 10%. Further growth of the ZnO nanorod layer on the blanket ZnO layer increased the light extraction efficiency of the LED by about 23%. In the case that a patterned ZnO nanorod layer was formed on a blanket ZnO layer, the light extraction efficiency increased by about 34%. These enhancements of the device were caused by modulation of the refractive-index in ZnO layers and the surface roughening effects because of the unique design of the pattern, which was nanostructure-in-nanopattern, resulting in the formation of many escape cones on the LED surface.